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| ILCT6/ MCT6 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features * * * * * Current Transfer Ratio, 50 % Typical Leakage Current, 1.0 nA Typical Two Isolated Channels Per Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C C A 1 2 3 4 8E 7C 6C 5E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60065 i179016 e3 Pb Pb-free can also be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Order Information Part ILCT6 MCT6 ILCT6-X007 ILCT6-X009 MCT6-X007 MCT6-X009 Remarks CTR 20 %, DIP-8 CTR 20 %, DIP-8 CTR 20 %, SMD-8 (option 7) CTR 20 %, SMD-8 (option 9) CTR 20 %, SMD-8 (option 7) CTR 20 %, SMD-8 (option 9) Description The ILCT6/ MCT6 is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILCT6/ MCT6 is especially designed for driving medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. It For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Rated forward current, DC Peak forward current, DC Power dissipation Derate linearly from 25 C 1.0 s pulse, 300 pps IFM Pdiss Test condition Symbol Value 60 3.0 100 1.3 Unit mA A mW mW/C Document Number 83645 Rev. 1.4, 26-Oct-04 www.vishay.com 1 ILCT6/ MCT6 Vishay Semiconductors Output Parameter Collector current Collector-emitter breakdown voltage Power dissipation Derate linearly from 25 C Test condition Symbol IC BVCEO Pdiss Value 30 30 150 2 Unit mA V mW mW/C Coupler Parameter Isolation test voltage Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Creepage Clearance Total package dissipation Derate linearly from 25 C Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb Ptot Test condition Symbol VISO RIO RIO Value 5300 1012 1011 7.0 7.0 400 5.33 - 55 to + 150 - 55 to + 100 10 Unit VRMS mm mm mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Junction capacitance Test condition IF = 20 mA VR = 3.0 V VF = 0 V Symbol VF IR Cj Min Typ. 1.25 0.1 25 Max 1.50 10 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter leakage current Collector-emitter capacitance Test condition IC = 10 A, IE = 10 A IC = 10 A, IE = 10 A VCE = 10 V VCE = 0 V Symbol BVCEO BVECO ICEO CCE Min 30 7.0 Typ. 65 10 1.0 8.0 100 Max Unit V V nA pf www.vishay.com 2 Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Coupler Parameter Saturation voltage, collectoremitter Capacitance (input-output) Capacitance between channels Bandwidth Test condition IC = 2.0 mA, IF = 16 mA f = 1.0 MHz f = 1.0 MHz IC = 2.0 mA, VCC = 10 V, RL = 100 Symbol VCEsat CIO 0.5 0.4 150 Min Typ. Max 0.40 Unit V pF pF kHz Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V Symbol CTRDC Min 20 Typ. 50 Max Unit % Switching Characteristics Parameter Switching times, output transistor Test condition IC = 2.0 mA, RE = 100 , VCE = 10 V Symbol ton, toff Min Typ. 3.0 Max Unit s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 VF - Forward Voltage - V 1.5 NCTR - Normalized CTR 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C 1.0 Ta = 25C Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V 0.5 NCTR(SAT) NCTR 0.0 Ta = 85C 1 10 IF - Forward Current - mA 100 iilct6_02 .1 1 10 100 I F - LED Current - mA iilct6_01 Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number 83645 Rev. 1.4, 26-Oct-04 www.vishay.com 3 ILCT6/ MCT6 Vishay Semiconductors 1.5 ICE - Collector Current - mA NCTR - Normalized CTR Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C 35 30 25 20 15 10 5 0 25C 85C 70C 50C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA 0 iilct6_06 10 20 30 40 50 60 iilct6_03 IF - LED Current - mA Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 6. Collector-Emitter Current vs. Temperature and LED Current 1.5 NCTR - Normalized CTR 10 5 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C ICEO - Collector-Emitter - nA 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Typical Vce = 10 V 1.0 CTRce(sat) VCE = 0.4 V TA= 70C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA TA - Ambient Temperature - C iilct6_07 iilct6_04 Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 7. Collector-Emitter Leakage Current vs.Temp. 1.5 NCTR - Normalized CTR 1000 tpLH - Propagation Delay s 2.5 tpHL - Propagation Delay s 1.0 Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V TA = 85C Ta = 25C, IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0 0.5 NCTR(SAT) NCTR .1 1 10 IF - LED Current - mA 100 10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k 1.5 0.0 1.0 iilct6_05 iilct6_08 Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 8. Propagation Delay vs. Collector Load Resistor www.vishay.com 4 Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors IF VCC = 5 V IF = 10 mA t PHL VO tPLH VO F = 10 KHz, DF = 50% RL = 75 tS 50% iilct6_10 iilct6_09 tD tR tF Figure 9. Switching Timing Figure 10. Switching Schematic Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Document Number 83645 Rev. 1.4, 26-Oct-04 www.vishay.com 5 ILCT6/ MCT6 Vishay Semiconductors Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 www.vishay.com 6 Document Number 83645 Rev. 1.4, 26-Oct-04 ILCT6/ MCT6 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83645 Rev. 1.4, 26-Oct-04 www.vishay.com 7 |
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